US Patent 9123558 Bipolar junction transistor
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Patent abstract
In accordance with one embodiment, the present invention provides a bipolar junction transistor including an emitter region; a base region; a first isolation between the emitter region and the base region; a gate on the first isolation region and overlapping at least a portion of a periphery of the emitter region; a collector region; and a second isolation between the base region and the collector region.
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US Patent 09123558 Bipolar junction transistor US Patent 9123558 Bipolar junction transistor
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Patent Number
091235580
Patent Number
91235580
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Patent Jurisdiction
Patent Number
091235580
Date of Patent
September 1, 2015
0Patent Application Number
131647440
Date Filed
June 20, 2011
0Official Website
Patent Primary Examiner
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US Patent 09123558 Bipolar junction transistor
Infobox
Is a
Patent jurisdiction
Patent number
09123558
Date of patent
September 1, 2015
Patent application number
13164744
Date Filed
June 20, 2011
Patent primary examiner
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