Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 8, 2015
0Patent Application Number
141683500
Date Filed
January 30, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6.
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