Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 8, 2015
Patent Application Number
13870027
Date Filed
April 25, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.
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