Patent attributes
A semiconductor device with a transistor in which current flowing between a source and a drain when the voltage of a gate electrode is 0 V can be reduced is provided. The semiconductor device incorporates a multi-gate transistor having an oxide semiconductor film formed over an insulating surface, a first gate insulating film in contact with a first surface of the oxide semiconductor film, a first gate electrode between the insulating surface and the oxide semiconductor film, a second gate insulating film in contact with a second surface of the oxide semiconductor film, and a second gate electrode in contact with the second gate insulating film. The oxide semiconductor film has a first region overlapping with the first gate electrode and a second region not overlapping with the first gate electrode, and the second gate electrode overlaps with the first region and the second region of the oxide semiconductor film.
