Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 15, 2015
0Patent Application Number
131924980
Date Filed
July 28, 2011
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate. In particular, the amount of hydrogen contained in the cap film formed over the semiconductor substrate is preferably greater than or equal to the irradiation amount of hydrogen ions.
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