US Patent 9142761 Method for fabricating a magnetic tunnel junction device
All edits
Edits on 21 Mar, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 3 Dec, 2023
Golden AI
Edits made to:
Article (+280 characters)
Article
Patent abstract
A method includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer.
Edits on 24 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 09142761 Method for fabricating a magnetic tunnel junction device US Patent 9142761 Method for fabricating a magnetic tunnel junction device
Infobox
Patent Number
091427610
Patent Number
91427610
Edits on 18 May, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 22 Mar, 2023
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
091427610
Date of Patent
September 22, 2015
0Patent Application Number
140139430
Date Filed
August 29, 2013
0Official Website
Patent Primary Examiner
Edits on 8 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 3 Jan, 2022
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 09142761 Method for fabricating a magnetic tunnel junction device
Infobox
Is a
Patent jurisdiction
Patent number
09142761
Date of patent
September 22, 2015
Patent application number
14013943
Date Filed
August 29, 2013
Patent primary examiner
Find more entities like US Patent 9142761 Method for fabricating a magnetic tunnel junction device
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
