Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 13, 2015
Patent Application Number
14089974
Date Filed
November 26, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A fin structure of a semiconductor device, such as a fin field effect transistor (FinFET), and a method of manufacture, is provided. In an embodiment, trenches are formed in a substrate, and a liner is formed along sidewalls of the trenches, wherein a region between adjacent trenches define a fin. A dielectric material is formed in the trenches. Portions of the semiconductor material of the fin are replaced with a second semiconductor material and a third semiconductor material, the second semiconductor material having a different lattice constant than the substrate and the third semiconductor material having a different lattice constant than the second semiconductor material. Portions of the second semiconductor material are oxidized.
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