A structure including a first interconnect including a first line overlying a first via and a second interconnect including a second line overlying a second via. The first line and the second line are co-planar. The first interconnect comprises a first conductor, the first conductor comprises a metal silicide including titanium silicide, cobalt silicide, nickel silicide, tungsten silicide, platinum silicide, molybdenum silicide, tantalum silicide, or some combination thereof. The second interconnect comprises a second conductor, the second conductor comprising copper.