US Patent 9171887 Semiconductor device and method of manufacturing same
Patent 9171887 was granted and assigned to Sony on October, 2015 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device includes: a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.
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US Patent 09171887 Semiconductor device and method of manufacturing same US Patent 9171887 Semiconductor device and method of manufacturing same
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Patent Number
091718870
Patent Number
91718870
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Patent Jurisdiction
Patent Number
091718870
Date of Patent
October 27, 2015
0Patent Application Number
142687740
Date Filed
May 2, 2014
0Official Website
Patent Primary Examiner
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US Patent 09171887 Semiconductor device and method of manufacturing same
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09171887
Date of patent
October 27, 2015
Patent application number
14268774
Date Filed
May 2, 2014
Patent primary examiner
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