Patent 9171920 was granted and assigned to National Chiao Tung University on October, 2015 by the United States Patent and Trademark Office.
The present invention discloses a gate structure, which is applied for an electronic component comprising a substrate and an active region defined thereon, and such the gate structure is disposed in the active region and is a T-shaped gate having a stem with a height of 250 nm. Preferably, the gate structure has a gate length of 60 nm.