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US Patent 9177756 E-beam enhanced decoupled source for semiconductor processing

Patent 9177756 was granted and assigned to Lam Research on November, 2015 by the United States Patent and Trademark Office.

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Patent
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Patent attributes

Current Assignee
Lam Research
Lam Research
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
91777560
Date of Patent
November 3, 2015
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Patent Application Number
133570030
Date Filed
January 24, 2012
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Patent Citations Received
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US Patent 12125674 Surface charge and power feedback and control using a switch mode bias system
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US Patent 11942309 Bias supply with resonant switching
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US Patent 11978613 Transition control in a bias supply
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US Patent 11670487 Bias supply control and data processing
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US Patent 11842884 Spatial monitoring and control of plasma processing environments
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US Patent 11887812 Bias supply with a single controlled switch
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Patent Primary Examiner
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Joseph Schoenholtz
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Patent abstract

A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.

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