Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 10, 2015
0Patent Application Number
137929230
Date Filed
March 11, 2013
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.
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