Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 24, 2015
Patent Application Number
14483662
Date Filed
September 11, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film.
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