Patent attributes
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device includes a substrate, at least one split gate memory device, and at least one logic device. The split gate memory device is disposed on the substrate. The logic device is disposed on the substrate. At least one of a select gate and a main gate of the split gate memory device and a logic gate of the logic device are made of metal. The method for manufacturing the semiconductor device includes forming at least one split gate stack and at least one logic gate stack and respectively replacing at least one of a dummy gate layer and a main gate layer in the split gate stack and the dummy gate layer in the logic gate stack with at least one metal memory gate and a metal logic gate.
