Patent 9224635 was granted and assigned to Micron Technology on December, 2015 by the United States Patent and Trademark Office.
Subject matter disclosed herein may relate to word line electrodes and/or digit line electrodes in a cross-point array memory device. One or more word line electrodes may be configured to form a socket area to provide connection points to drivers and/or other circuitry that may be located within a footprint of an array of memory cells.