US Patent 9224671 III-N device structures and methods
Patent 9224671 was granted and assigned to Transphorm Inc. on December, 2015 by the United States Patent and Trademark Office.
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Patent abstract
A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.
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US Patent 09224671 III-N device structures and methods US Patent 9224671 III-N device structures and methods
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Patent Number
092246710
Patent Number
92246710
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Patent Applicant
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Patent Jurisdiction
Patent Number
092246710
Date of Patent
December 29, 2015
0Patent Application Number
145221540
Date Filed
October 23, 2014
0Official Website
Patent Primary Examiner
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US Patent 09224671 III-N device structures and methods
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09224671
Date of patent
December 29, 2015
Patent application number
14522154
Date Filed
October 23, 2014
Patent primary examiner
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