Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Daisuke Matsubayashi0
Date of Patent
January 5, 2016
0Patent Application Number
134439590
Date Filed
April 11, 2012
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A memory device includes a memory cell storing data as stored data, an output signal line, and a wiring to which a voltage is applied. The memory cell includes a comparison circuit performing a comparison operation between the stored data and search data and taking a conduction state or a non-conduction state in accordance with the operation result, and a field-effect transistor controlling writing and holding of the stored data. A voltage of the output signal line is equal to the voltage of the wiring when the comparison circuit is in the conduction state.
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