Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Donald Franklin Foust0
Scott Daniel Feldman-Peabody0
Wyatt Keith Metzger0
Yinghui Shan0
Hongbo Cao0
Laura Anne Clark0
Robert Andrew Garber0
Roman Shuba0
Date of Patent
January 5, 2016
Patent Application Number
13601162
Date Filed
August 31, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.
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