Patent attributes
A through-silicon-via structure formed within a semiconductor device is provided. The TSV structure may include a trench located within a substrate of the semiconductor device, an insulator layer located on at least one side wall of the trench, an electrically conductive layer located on the insulator layer, a first dielectric layer located on the electrically conductive layer, and a second dielectric layer located on the first dielectric layer and filling the trench. The second dielectric layer includes a higher refractive index relative to the first dielectric layer, such that the first and the second dielectric layer create an optical waveguide. The electrically conductive layer provides electrical coupling between the semiconductor device and another semiconductor device, while the optical waveguide provides optical coupling between the semiconductor device and the another semiconductor device, whereby the another semiconductor device has another substrate that is separate from the substrate of the semiconductor device.
