Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jhy-Kang Ting0
Tsung-Chieh Tsai0
Yung-Che Albert Shih0
Date of Patent
January 12, 2016
0Patent Application Number
143030240
Date Filed
June 12, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device includes forming a first metal gate electrode over a substrate, forming a second metal gate electrode over the substrate, removing at least a part of the first metal gate electrode to form a first opening, and filling the first opening with a non-conductive material.
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