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US Patent 9245752 Method for etching atomic layer of graphene

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
92457520
Patent Inventor Names
Geun Young Yeom0
Jong Sik Oh0
Kyung Seok Min0
Woong Sun Lim0
Yi Yeon Kim0
Date of Patent
January 26, 2016
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Patent Application Number
141610500
Date Filed
January 22, 2014
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Patent Citations Received
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US Patent 11942306 Atomic layer etching by electron wavefront
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US Patent 11664195 DC plasma control for electron enhanced material processing
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US Patent 11676797 DC plasma control for electron enhanced material processing
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US Patent 11688588 Electron bias control signals for electron enhanced material processing
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US Patent 11715623 DC plasma control for electron enhanced material processing
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US Patent 11869747 Atomic layer etching by electron wavefront
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US Patent 11887823 Electron bias control signals for electron enhanced material processing
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Patent Primary Examiner
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Duy Deo
0
Patent abstract

This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

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