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US Patent 9245805 Germanium FinFETs with metal gates and stressors

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
July 7, 2010
Date of Patent
January 26, 2016
Patent Application Number
12831903
Patent Citations Received
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US Patent 12132091 Work function layers for transistor gate electrodes
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US Patent 12094779 FinFETs with epitaxy regions having mixed wavy and non-wavy portions
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US Patent 12107163 Semiconductor device structure having dislocation stress memorization and methods of forming the same
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US Patent 12113132 Metal rail conductors for non-planar semiconductor devices
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US Patent 12119270 Hybrid source drain regions formed based on same fin and methods forming same
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US Patent 12119401 Semiconductor device and methods of forming
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US Patent 12125706 Semiconductor device and method of manufacture
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US Patent 11658216 Method and structure for metal gate boundary isolation
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US Patent 11664268 Dummy fin structures and methods of forming same
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US Patent 11670551 Interface trap charge density reduction
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•••
Patent Inventor Names
Clement Hsingjen Wann
0
Chih Chieh Yeh
0
Chih-Sheng Chang
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
9245805
Patent Primary Examiner
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Hoang-Quan Ho

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