US Patent 9252237 Transistors, semiconductor devices, and methods of manufacture thereof

Transistors, semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor over a workpiece. The transistor includes a sacrificial gate material comprising a group III-V material. The method includes combining a metal (Me) with the group III-V material of the sacrificial gate material to form a gate of the transistor comprising a Me-III-V compound material.