Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshinari Sasaki0
Kosei Noda0
Mizuho Sato0
Yuta Endo0
Date of Patent
February 16, 2016
0Patent Application Number
131102360
Date Filed
May 18, 2011
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.
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