Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Stephen A. Fanelli0
Date of Patent
February 23, 2016
0Patent Application Number
146733090
Date Filed
March 30, 2015
0Patent Citations Received
0
...
Patent Primary Examiner
Patent abstract
A semiconductor structure is formed with a first wafer (e.g. a handle wafer) and a second wafer (e.g. a bulk silicon wafer) bonded together. The second wafer includes an active layer, which in some embodiments is formed before the two wafers are bonded together. A substrate is removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC or SiGeBC layer as an etch stop. In some embodiments, the SiGeC or SiGeBC layer is formed by epitaxial growth, ion implantation or a combination of epitaxial growth and ion implantation.
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