Patent attributes
A semiconductor chip includes a substrate and a semiconductor layer positioned above the substrate. A hybrid through-silicon via (“TSV”) extends continuously through at least the semiconductor layer and the substrate and includes a first TSV portion and a second TSV portion. A lower portion of the first TSV portion is positioned in the substrate and has a lower surface adjacent to a back side of the substrate and an upper surface below the semiconductor layer. Upper sidewall portions of the first TSV portion extend from the upper surface through at least the semiconductor layer. A depth of the lower portion is greater than a thickness of the upper sidewall portions. The second TSV portion is conductively coupled to the first TSV portion, is laterally surrounded by the upper sidewall portions, and extends continuously from the upper surface through at least the semiconductor layer.
