US Patent 9269790 High-electron-mobility transistor
Patent 9269790 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on February, 2016 by the United States Patent and Trademark Office.
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Patent abstract
A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.
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US Patent 09269790 High-electron-mobility transistor US Patent 9269790 High-electron-mobility transistor
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Patent Number
0926979000
Patent Number
926979000
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Patent Applicant
Current Assignee
0
Patent Jurisdiction
Patent Number
092697900
Date of Patent
February 23, 2016
0Patent Application Number
140977090
Date Filed
December 5, 2013
0Official Website
Patent Primary Examiner
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Infobox
Is a
Patent Applicant
Current Assignee
0
Patent Jurisdiction
Patent Number
092697900
Date of Patent
February 23, 2016
0Patent Application Number
140977090
Date Filed
December 5, 2013
0Official Website
Patent Primary Examiner
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US Patent 09269790 High-electron-mobility transistor
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09269790
Date of patent
February 23, 2016
Patent application number
14097709
Date Filed
December 5, 2013
Patent primary examiner
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