Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 23, 2016
Patent Application Number
14028776
Date Filed
September 17, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable semiconductor device including the transistor is provided. A semiconductor device includes a multi-layer film including an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the multi-layer film, and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. In the semiconductor device, the oxide semiconductor layer contains indium, the oxide semiconductor layer is in contact with the oxide layer, and the oxide layer contains indium and has a larger energy gap than the oxide semiconductor layer.
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