US Patent 9269826 Amorphous oxide and thin film transistor
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Patent abstract
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
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US Patent 09269826 Amorphous oxide and thin film transistor US Patent 9269826 Amorphous oxide and thin film transistor
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Patent Number
0926982600
Patent Number
926982600
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Patent Jurisdiction
Patent Number
092698260
Date of Patent
February 23, 2016
0Patent Application Number
129849600
Date Filed
January 5, 2011
0Official Website
Patent Primary Examiner
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Is a
Patent Jurisdiction
Patent Number
092698260
Date of Patent
February 23, 2016
0Patent Application Number
129849600
Date Filed
January 5, 2011
0Official Website
Patent Primary Examiner
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US Patent 09269826 Amorphous oxide and thin film transistor
Infobox
Is a
Patent jurisdiction
Patent number
09269826
Date of patent
February 23, 2016
Patent application number
12984960
Date Filed
January 5, 2011
Patent primary examiner
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