Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hidenobu Fukutome0
Shigenobu Maeda0
Tsukasa Matsuda0
Date of Patent
March 1, 2016
0Patent Application Number
141617440
Date Filed
January 23, 2014
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fin, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an upper surface and sidewall of the first elevated source/drain.
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