US Patent 9281201 Method of manufacturing semiconductor device having metal gate
Patent 9281201 was granted and assigned to United Microelectronics Corporation on March, 2016 by the United States Patent and Trademark Office.
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A method of manufacturing a semiconductor device having a metal gate is provided. A substrate having a first conductive type transistor and a second conductive type transistor formed thereon is provided. The first conductive type transistor has a first trench and the second conductive type transistor has a second trench. A first work function layer is formed in the first trench. A hardening process is performed for the first work function layer. A softening process is performed for a portion of the first work function layer. A pull back step is performed to remove the portion of the first work function layer. A second work function layer is formed in the second trench. A low resistive metal layer is formed in the first trench and the second trench.
US Patent 09281201 Method of manufacturing semiconductor device having metal gate US Patent 9281201 Method of manufacturing semiconductor device having metal gate
US Patent 09281201 Method of manufacturing semiconductor device having metal gate
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