A solid state drive having at least one NAND flash memory component organized in blocks, pages and cells. Each cell is adapted to store at least two bits. Each block of the memory component is adapted to be dynamically configured to store at least one bit per cell using a first mode of operation and dynamically configured to store at least two bits per cell using a second mode of operation while the mass storage device is operating, wherein the first mode of operation entails programming fewer bits of a cell in fewer passes as compared to the second mode of operation.