US Patent 9306154 Magnetic random access memory with perpendicular enhancement layer
Patent 9306154 was granted and assigned to Avalanche Technology Inc. on April, 2016 by the United States Patent and Trademark Office.
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The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer.
US Patent 09306154 Magnetic random access memory with perpendicular enhancement layer US Patent 9306154 Magnetic random access memory with perpendicular enhancement layer
US Patent 09306154 Magnetic random access memory with perpendicular enhancement layer
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