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US Patent 9318581 Forming wrap-around silicide contact on finFET

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 25, 2015
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Date of Patent
April 19, 2016
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Patent Application Number
14952108
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Patent Citations Received
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US Patent 11948971 Confined source/drain epitaxy regions and method forming same
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US Patent 11677026 Transistor having wrap-around source/drain contacts
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US Patent 11688637 Wrap-around contact structures for semiconductor fins
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US Patent 11757012 Source and drain contact cut last process to enable wrap-around-contact
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US Patent 11948839 Power reduction in finFET structures
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US Patent 11949015 Mechanisms for growing epitaxy structure of finFET device
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Patent Inventor Names
Zuoguang Liu
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Hemanth Jagannathan
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Dechao Guo
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Shogo Mochizuki
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9318581
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Patent Primary Examiner
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Christine Enad
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