US Patent 9318624 Schottky structure employing central implants between junction barrier elements
Patent 9318624 was granted and assigned to Wolfspeed on April, 2016 by the United States Patent and Trademark Office.
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The present disclosure relates to a Schottky diode having a drift layer and a Schottky layer. The drift layer is predominantly doped with a doping material of a first conductivity type and has a first surface associated with an active region. The Schottky layer is provided over the active region of the first surface to form a Schottky junction. A plurality of junction barrier elements are formed in the drift layer below the Schottky junction, and a plurality of central implants are also formed in the drift layer below the Schottky junction. In certain embodiments, at least one central implant is provided between each adjacent pair of junction barrier elements.
US Patent 09318624 Schottky structure employing central implants between junction barrier elements US Patent 9318624 Schottky structure employing central implants between junction barrier elements
US Patent 09318624 Schottky structure employing central implants between junction barrier elements
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