Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 19, 2016
Patent Application Number
14394059
Date Filed
October 16, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.
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