Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 26, 2016
Patent Application Number
14567282
Date Filed
December 11, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
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