US Patent 9324937 Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity

A thermally assisted magnetoresistive random access memory (TAS-MRAM) device includes a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact. The TAS-MRAM device further includes a dielectric layer that is formed on an upper surface of the first electrical contact and that encapsulates the second electrical contact. The dialectic layer has at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer.