Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zuoguang Liu0
Chia-Yu Chen0
Tenko Yamashita0
Date of Patent
May 3, 2016
Patent Application Number
14301587
Date Filed
June 11, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
Techniques for a semiconductor device are provided. Techniques are directed to forming a semiconductor device by: forming a fin structure in a substrate, forming a protective layer over an upper portion of the fin structure, the protective layer having an etch selectivity with respect to a material of the fin structure, and performing an undercut etch so as to remove a lower portion of the fin structure below the protective layer, thereby defining a nanowire structure from the fin structure.
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