Patent 9337413 was granted and assigned to Avalanche Technology Inc. on May, 2016 by the United States Patent and Trademark Office.
One embodiment of the present invention includes a multi-state current-switching magnetic memory element that includes a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer. The stack is for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.