Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Teppei Oguni0
Toshihiko Takeuchi0
Kazuki Tanemura0
Minoru Takahashi0
Takeshi Osada0
Date of Patent
May 10, 2016
0Patent Application Number
135860500
Date Filed
August 15, 2012
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A power storage device in which silicon is used as a negative electrode active material layer and which can have an improved performance such as higher discharge capacity, and a method for manufacturing the power storage device are provided. A power storage device includes a current collector and a silicon layer having a function as an active material layer over the current collector. The silicon layer includes a thin film portion in contact with the current collector, a plurality of bases, and a plurality of whisker-like protrusions extending from the plurality of bases. A protrusion extending from one of the plurality of bases is partly combined with a protrusion extending from another one of the plurality of bases.
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