US Patent 9352955 MEMS pressure sensor with improved insensitivity to thermo-mechanical stress

This invention relates generally to semiconductor manufacturing and packaging and more specifically to semiconductor manufacturing in MEMS (Microelectromechanical systems) inertial sensing products. Embodiments of the present invention improve pressure sensor performance (e.g., absolute and relative accuracy) by increasing pressure insensitivity to changes in thermo-mechanical stress. The pressure insensitivity can be achieved by using the array of pressure sensing membranes, suspended sensing electrodes, and dielectric anchors.