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US Patent 9361986 High endurance non-volatile storage

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Patent Citations Received
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US Patent 11990185 Dynamic word line reconfiguration for NAND structure
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Patent abstract

A non-volatile storage system is disclosed that includes non-volatile memory cells designed for high endurance and lower retention than other non-volatile memory cells.

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Patent Inventor Names
Alex Mak0
Deepanshu Dutta0
Jian Chen0
Masaaki Higashitani0
Sergei Gorobets0
Seungpil Lee0
Steven Sprouse0
Tien-Chien Kuo0
Yan Li0
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=093619860
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US Patent 09361986 High endurance non-volatile storage US Patent 9361986 High endurance non-volatile storage

Infobox
Patent Number
093619860
Patent Number
93619860
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
093619860
Date of Patent
June 7, 2016
0
Patent Application Number
136220450
Date Filed
September 18, 2012
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=093619860
Patent Primary Examiner
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Douglas King
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=09361986
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 US Patent 09361986 High endurance non-volatile storage

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
09361986
Date of patent
June 7, 2016
Patent application number
13622045
Date Filed
September 18, 2012
Patent primary examiner
‌
Douglas King

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