Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 14, 2016
Patent Application Number
13446199
Date Filed
April 13, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
A FinFET comprises an isolation region formed in a substrate, a reverse T-shaped fin formed in the substrate, wherein a bottom portion of the reverse T-shaped fin is enclosed by the isolation region and an upper portion of the reverse T-shaped fin protrudes above a top surface of the isolation region. The FinFET further comprises a gate electrode wrapping the reverse T-shaped fin.
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