Patent attributes
A wide bandgap semiconductor device includes a wide bandgap semiconductor layer and a Schottky electrode. The wide bandgap semiconductor layer includes a first impurity region which is in contact with the Schottky electrode, is in contact with a second main surface, and has a first conductivity type, and a second impurity region which is in contact with the Schottky electrode, is in contact with the first impurity region, and has a second conductivity type. The second impurity region has a first region which is in contact with the Schottky electrode, and a second region which is connected with the first region and provided on a side of the first region closer to the second main surface. A maximum value of a width of the second region is larger than a width of a boundary portion between the first region and the Schottky electrode.
