US Patent 9396963 Mask removal process strategy for vertical NAND device
Patent 9396963 was granted and assigned to Mattson Technology on July, 2016 by the United States Patent and Trademark Office.
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A method for removing a doped amorphous carbon mask from a semiconductor substrate is disclosed. The method comprises generating a plasma to be used in treating the substrate, wherein the plasma comprises an oxygen containing gas, a halogen containing gas, and a hydrogen containing gas; and treating the substrate by exposing the substrate to the plasma. The doped amorphous carbon mask can be a boron doped amorphous carbon mask or a nitrogen doped amorphous carbon mask. The method can result in a mask removal rate ranging from about 1,000 Ångströms/minute to about 12,000 Ångströms/minute. Further, gases can be applied to the substrate before plasma treatment, after plasma treatment, or both to reduce the amount of defects or pinholes found in the substrate film.
US Patent 09396963 Mask removal process strategy for vertical NAND device US Patent 9396963 Mask removal process strategy for vertical NAND device
US Patent 09396963 Mask removal process strategy for vertical NAND device
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