Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 19, 2016
Patent Application Number
13730052
Date Filed
December 28, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
The invention relates to a contact structure of a semiconductor device. An exemplary structure for a semiconductor device comprises an insulation region over a substrate; a gate electrode layer over the insulation region comprising a gate middle line; a first contact structure over the insulation region adjacent to the gate electrode layer comprising a first middle line, wherein the first middle line and the gate middle line has a first distance; and a second contact structure over the insulation region on a side of the gate electrode layer opposite to the first contact structure comprising a second middle line, wherein the second middle line and the gate middle line has a second distance greater than the first distance.
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