Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hui Zang0
Date of Patent
August 9, 2016
Patent Application Number
14609271
Date Filed
January 29, 2015
Patent Citations Received
Patent Primary Examiner
Patent abstract
There is set forth herein a method of fabricating a semiconductor structure, the method including forming a conductive metal layer over a source/drain region. The conductive metal layer in one aspect can prevent gouging of a source/drain region during removal of materials above a source/drain region. The conductive metal layer in one aspect can be used to pattern an air spacer for reduced parasitic capacitance. The conductive metal layer in one aspect can reduce a contact resistance between a source/drain region and a contact above a source/drain region.
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