US Patent 9412679 Power semiconductor device
Patent 9412679 was granted and assigned to Mitsubishi Electric Corporation on August, 2016 by the United States Patent and Trademark Office.
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An insulating substrate includes a base portion that is made of metal and serves as a radiating surface, an insulating layer, and a circuit pattern. The insulating substrate has convex warpage in the radiating surface at ambient temperature. A power semiconductor element is mounted on the circuit pattern. A sealing material has a thickness greater than a thickness of the insulating substrate. The sealing material has a linear expansion coefficient greater than a linear expansion coefficient of the insulating substrate in an in-plane direction of a mounting surface of the insulating substrate. A heat conduction layer is located on the radiating surface of the base portion and is solid at ambient temperature and is liquid at a temperature higher than or equal to a phase-change temperature higher than ambient temperature.
US Patent 09412679 Power semiconductor device US Patent 9412679 Power semiconductor device
US Patent 09412679 Power semiconductor device
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