US Patent 9412849 Method of fabricating semiconductor device

A method of fabricating a semiconductor device includes forming first and second fin-type structures on first and second regions of a substrate, respectively, forming first and second capping layers on the first and second fin-type structures, respectively, forming a first dummy gate electrode on the first capping layer and a second dummy gate electrode on the second capping layer, exposing the first capping layer and the second capping layer by removing the first dummy gate electrode and the second dummy gate electrode, forming a second wire pattern group on the second region, and forming a first wire pattern group on the first region.